symbol v ds v gs i dm t j , t stg symbol typ max 33 40 62 75 r jl 18 24 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 20 gate-source voltage drain-source voltage -30 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -5.3 -30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d -6.5 p-channel enhancement mode field effect transistor features v ds (v) = -30v i d = -6.5a r ds(on) < 46m ? (v gs = -10v) r ds(on) < 72m ? (v gs = -4.5v) general description the LO4459PT1G uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. . g d s top view g s s s d d d d leshan radio company, ltd. LO4459PT1G sop-8 LO4459PT1G is a green product ordering option. rev .o 1/4
symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -1.85 -3 v i d(on) -30 a 46 t j =125c 68 72 m ? g fs 11 s v sd -0.78 -1 v i s -3.5 a c iss 668 830 pf c oss 126 pf c rss 92 pf r g 69 ? q g (10v) 12.7 16 nc q g (4.5v) 6.4 nc q gs 2nc q gd 4nc t d(on) 7.7 ns t r 6.8 ns t d(off) 20 ns t f 10 ns t rr 22 30 ns q rr 15 nc dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =2.5 ? , r gen =3 ? turn-off fall time turn-on delaytime switching parameters total gate charge (4.5v) gate source charge gate drain charge total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6.5a m ? v gs =-4.5v, i d =-4.2a i s =-1a,v gs =0v v ds =-5v, i d =-6.5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-6.5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-5.3a reverse transfer capacitance i f =-6.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. leshan radio company, ltd. rev .o 2/4
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 5 10 15 20 25 30 35 40 012345 -v ds (volts) figure 1: on-region characteristics -i d (a) -4v -4.5v -10v 0 2 4 6 8 10 012345 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v -40c 20 40 60 80 100 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-4.5v v gs =-10v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c -40c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 20 40 60 80 100 120 140 160 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-6.5a 25 c 125c -40 c -5v v gs =-3.5v -8v v gs =-10v i d =-6.5a v gs =-4.5v i d =-5a leshan radio company, ltd. rev .o 3/4
typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 03691215 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z ja normalized transient thermal resistance 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 1 00 m s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-6.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c leshan radio company, ltd. rev .o 4/4
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